Controlling surface kinetics scales p-type two-dimensional semiconductors
This breakthrough signals a critical step toward commercial viability for 2D semiconductors, addressing stability and scalability challenges that have long hindered their industrial adoption.

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The precise control of surface and near-surface atomic kinetics produces environmentally stable p-type two-dimensional (2D) semiconductors at wafer scale, providing a pathway for the manufacture of scalable 2D complementary electronics. This is a preview of subscription content, access via your institution Access options Access through your institution Access Nature and 54 other Nature Portfolio journals Get Nature+, our best-value online-access subscription $32.99 / 30 days cancel any time Learn more Subscribe to this journal Receive 12 print issues and online access $259.00 per year only $21.58 per issue Learn more Rent or buy this article Prices vary by article type from$1.95 to$39.95 Learn more Prices may be subject to local taxes which are calculated during checkout Fig. 1: Engineering 2D crystal growth of MoSi2N4 at the wafer scale towards integration in a transistor device as a p-type channel. Subjects Two-dimensional materials Electronic devices ReferencesRadisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Nat. Nanotechnol. 6, 147–150 (2011).Article CAS PubMed Google Scholar Tan, Y. et al. ACS Nano 9, 8916–8925 (2025).Article Google Scholar Li, L. et al. Nat. Nanotechnol. 9, 372–377 (2014).Article CAS PubMed Google Scholar Wang, Y. et al. Nat. Electron. 1, 228–236 (2018).Article Google Scholar Sun, S. et al. Nat. Mater. https://doi.org/10.1038/s41563-026-02669-5 (2026).Article PubMed PubMed Central Google Scholar Lee, Y. H. et al. Adv. Mater. 24, 2320–2325 (2012).Article CAS PubMed Google Scholar Zhang, Z. & Lagally, M. G. Science 276, 377–383 (1997).Article CAS PubMed Google Scholar Sun, L. et al. Nat. Electron. https://doi.org/10.1038/s41928-026-01637-w (2026).Article Google Scholar Download referencesAuthor informationAuthors and AffiliationsConsiglio Nazionale delle Ricerche (CNR), Istituto di Microelettronica e Microsistemi (IMM), Agrate Brianza, ItalyAlessandro MolleSchool of Physics, Beihang University, Beijing, ChinaYi DuAuthorsAlessandro MolleView author publicationsSearch author on:PubMed Google ScholarYi DuView author publicationsSearch author on:PubMed Google ScholarCorresponding authorsCorrespondence to Alessandro Molle or Yi Du.Ethics declarations Competing interests The authors declare no competing interests. Rights and permissionsReprints and permissionsAbout this articleCite this articleMolle, A., Du, Y. Controlling surface kinetics scales p-type two-dimensional semiconductors. Nat. Mater. (2026). https://doi.org/10.1038/s41563-026-02704-5Download citationPublished: 10 August 2026Version of record: 10 August 2026DOI: https://doi.org/10.1038/s41563-026-02704-5Share this articleAnyone you share the following link with will be able to read this content:Get shareable linkSorry, a shareable link is not currently available for this article.Copy shareable link to clipboard Provided by the Springer Nature SharedIt content-sharing initiative Wafer-scale growth of highly stable p-type semiconducting monolayer MoSi2N4 single crystals Su SunChuan XuWencai Ren Nature Materials Article 08 Jul 2026
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