Ultralow contact resistance in halide perovskite devices

Subjects Electronic devicesElectronic properties and materials A charge transfer between metal oxide and halide perovskites occurring beneath the metal contact surface locally dopes the semiconductor, dramatically reducing contact resistance and enabling efficient low-voltage charge injection. Access through your institution Buy or subscribe This is a preview of subscription content, access via your institution Access options Access through your institution Access Nature and 54 other Nature Portfolio journals Get Nature+, our best-value online-access subscription $32.99 / 30 days cancel any time Learn more Subscribe to this journal Receive 12 print issues and online access $259.00 per year only $21.58 per issue Learn more Rent or buy this article Prices vary by article type from$1.95 to$39.95 Learn more Prices may be subject to local taxes which are calculated during checkout Fig. 1: Charge-transfer doping at metal–perovskite contacts. ReferencesDennard, R. H. et al. IEEE J.

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