In-plane anomalous Hall effect in a low-dimensional system

Nature Materials (2026) Cite this article The anomalous Hall effect (AHE) in magnetic systems is typically governed by symmetry constraints that require the Hall response to be proportional to the out-of-plane magnetization component. Here we demonstrate the emergence of an unconventional in-plane AHE in a low-dimensional heterostructure. By interfacing a low-symmetry topological semimetal with a ferromagnetic insulator, we realize a system with reduced symmetry in which only a single mirror plane is preserved. When the magnetization acquires a finite component within this mirror plane, the remaining symmetry is broken, enabling a Hall response that depends on both in-plane and out-of-plane magnetization components. Measurements across multiple devices reveal a gate-tunable AHE, indicating electrostatic control of the underlying mechanisms. A minimal symmetry-constrained microscopic model shows that interfacial spin–orbit coupling and exchange interaction are responsible for the observed multidirectional AHE response. Our work establishes a pathway for engineering tunable, symmetry-driven Hall effects in low-dimensional quantum materials.This is a preview of subscription content, access via your institution Access Nature and 54 other Nature Portfolio journals Get Nature+, our best-value online-access subscription $32.99 / 30 days cancel any timeSubscribe to this journal Receive 12 print issues and online access $259.00 per yearonly $21.58 per issueBuy this articleUSD 39.95Prices may be subject to local taxes which are calculated during checkoutAll the data supporting the findings of this study are available in the article and its Supplementary Information. Source data are provided with this paper.Xiao, D., Chang, M.-C. & Niu, Q. Berry phase effects on electronic properties. Rev. Mod. 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ECCS-2208057, DMR-2210510 and ECCS-2531211, and from the Center for Emergent Materials at The Ohio State University, an NSF MRSEC, through award no. DMR-2011876. S. Singh also acknowledges financial support from NSF-CAREER Award through grant no. ECCS-2339723. J.K. acknowledges the financial support from ONR under award no. N00014-23-1-2751, the Center for Emergent Materials at The Ohio State University, an NSF MRSEC, through award no. DMR-2011876, and the US Department Office of Science, Office of Basic Sciences, of the US Department of Energy through award no. DE-SC002549 (for device fabrication). J.K. also acknowledges financial support from NSF-CAREER Award under grant no. DMR-2339309. Q.M. and J.T. acknowledge support from the ONR under grant no. N00014-24-1-2102 and from the NSF under grant no. 2522383. The single crystal growth and characterization of TaIrTe4 at UCLA were supported by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences under award no. DE-SC0021117. J.H.E. acknowledges the support for hBN crystal growth from the US Office of Naval Research under award no. N00014-22-1-2582. K.W. and T.T. acknowledge support from the JSPS KAKENHI (grant nos. 21H05233 and 23H02052), the CREST (JPMJCR24A5), JST and World Premier International Research Center Initiative (WPI), MEXT, Japan. We acknowledge A. J. Williams for providing the schematic of TaIrTe4 crystal structure used in the figures. We also thank R. Cheng and J. Tang for insightful discussions.These authors contributed equally: I-Hsuan Kao, Ravi Kumar Bandapelli.Department of Physics, Carnegie Mellon University, Pittsburgh, PA, USAI-Hsuan Kao, Ravi Kumar Bandapelli, Zhenhong Cui, Shuchen Zhang, Souvik Sasmal, Aalok Tiwari, Mei-Tung Chen, Raghvendra Posti, Shubhayu Chatterjee, Jyoti Katoch & Simranjeet SinghDepartment of Physics, Boston College, Chestnut Hill, MA, USAJian Tang & Qiong MaDepartment of Physics and Astronomy and the California NanoSystems Institute, University of California, Los Angeles, CA, USATiema Qian & Ni NiMaterials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH, USARahul RaoTim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, USAJiahan Li & James H. EdgarResearch Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, JapanKenji WatanabeResearch Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, JapanTakashi TaniguchiDepartment of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USASu-Yang XuSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarS. Singh and J.K. supervised the research. I.-H.K. and R.K.B. prepared the devices, performed measurements and analysed the data with assistance of Z.C., S.S., A.T., M.-T.C. and R.P. J.T., Q.M. and S.-Y.X. provided the support for sample and device preparation. S.Z. and S.C. provided the theoretical support. R.R. carried out polarized Raman measurements. T.Q. and N.N. grew the bulk crystals of TaIrTe4. J.L., J.H.E., K.W. and T.T. provided the bulk h-BN crystals. All authors contributed to writing the paper.Correspondence to Simranjeet Singh.The authors declare no competing interests.Nature Materials thanks Gang Cao and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.Supplementary Figs. 1–10 and Table 1.Statistical source data for Fig. 1.Statistical source data for Fig. 2.Statistical source data for Fig. 3.Statistical source data for Fig. 4.Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.Reprints and permissionsKao, IH., Bandapelli, R.K., Cui, Z. et al. In-plane anomalous Hall effect in a low-dimensional system. Nat. Mater. (2026). https://doi.org/10.1038/s41563-026-02611-9Download citationReceived: 26 July 2025Accepted: 16 April 2026Published: 28 May 2026Version of record: 28 May 2026DOI: https://doi.org/10.1038/s41563-026-02611-9Anyone you share the following link with will be able to read this content:Sorry, a shareable link is not currently available for this article. Provided by the Springer Nature SharedIt content-sharing initiative