Optimal operation of hole spin qubits

Summarize this article with:
Nature Physics (2025)Cite this article Hole spins in silicon or germanium quantum dots have emerged as a capable platform for scalable solid-state quantum processors. In addition to benefiting from well-established manufacturing technologies, the large spin–orbit coupling of hole spin qubits enables fast control mediated by an electric field. Unfortunately, this coupling typically makes hole spin qubits susceptible to charge noise, which usually limits qubit coherence. Here we experimentally establish the existence of so-called sweet lines in the parameter space of field orientation where the qubit becomes insensitive to charge noise. We do this by varying the direction of a magnetic field applied to a silicon metal–oxide–semiconductor hole qubit. We also find that the observed sweet lines contain the points of maximal driving efficiency, in agreement with recent theoretical predictions. Furthermore, we show that moderate adjustments in gate voltages can substantially shift the sweet lines. This tunability allows several qubits to be simultaneously made insensitive to electrical noise, making it possible to design scalable qubit architectures that feature all-electrical spin control of many qubits.This is a preview of subscription content, access via your institution Access Nature and 54 other Nature Portfolio journals Get Nature+, our best-value online-access subscription $32.99 / 30 days cancel any timeSubscribe to this journal Receive 12 print issues and online access $259.00 per yearonly $21.58 per issueBuy this articleUSD 39.95Prices may be subject to local taxes which are calculated during checkoutAll data underlying this study are available via Zenodo at https://doi.org/10.5281/zenodo.17378720 (ref. 40).Maurand, R. et al. A CMOS silicon spin qubit. Nat. Commun. 7, 13575 (2016).Watzinger, H. et al. A germanium hole spin qubit. Nat. Commun. 9, 3902 (2018).Article ADS Google Scholar Fang, Y. et al. Recent advances in hole-spin qubits. Mater. Quantum Technol. 3, 012003 (2023).Article ADS Google Scholar Burkard, G. et al. Semiconductor spin qubits. Rev. Mod. Phys. 95, 025003 (2023).Article ADS Google Scholar Chatterjee, A. et al. Semiconductor qubits in practice. Nat. Rev. Phys. 3, 157–177 (2021).Article Google Scholar Froning, F. N. M. et al. Ultrafast hole spin qubit with gate-tunable spin–orbit switch functionality. Nat. Nanotechnol. 16, 308–312 (2021).Article ADS Google Scholar Wang, K. et al. Ultrafast coherent control of a hole spin qubit in a germanium quantum dot. Nat. Commun. 13, 206 (2022).Article ADS Google Scholar Hendrickx, N. W. et al. Fast two-qubit logic with holes in germanium. Nature 577, 487–491 (2020).Article ADS Google Scholar Geyer, S. et al. Anisotropic exchange interaction of two hole-spin qubits. Nat. Phys. 20, 1152–1157 (2024).Article Google Scholar Jirovec, D. et al. A singlet-triplet hole spin qubit in planar Ge. Nat. Mater. 20, 1106–1112 (2021).Article ADS Google Scholar Liles, S. D. et al. A singlet-triplet hole-spin qubit in MOS silicon. Nat. Commun. 15, 7690 (2024).Article ADS Google Scholar Wang, C.-A. et al. Operating semiconductor quantum processors with hopping spins. Science 385, 447–452 (2024).Article ADS Google Scholar Hendrickx, N. W. et al. A four-qubit germanium quantum processor. Nature 591, 580–585 (2021).Article ADS Google Scholar Piot, N. et al. A single hole spin with enhanced coherence in natural silicon. Nat. Nanotechnol. 17, 1072–1077 (2022).Article ADS Google Scholar Hendrickx, N. W. et al. Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity. Nat. Mater. 23, 920–927 (2024).Article ADS Google Scholar Wang, Z. et al. Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits. npj Quantum Inf. 7, 54 (2021).Article ADS Google Scholar Mauro, L. et al. Geometry of the dephasing sweet spots of spin-orbit qubits. Phys. Rev. B 109, 155406 (2024).Article ADS Google Scholar Carballido, M. J. et al. Compromise-free scaling of qubit speed and coherence. Nat. Commun. 16, 7616 (2025).Article ADS Google Scholar Crippa, A. et al. Electrical spin driving by g-matrix modulation in spin-orbit qubits. Phys. Rev. Lett. 120, 137702 (2018).Article ADS Google Scholar Elzerman, J. M. et al. Single-shot read-out of an individual electron spin in a quantum dot. Nature 430, 431–435 (2004).Article ADS Google Scholar Venitucci, B. et al. Electrical manipulation of semiconductor spin qubits within the g-matrix formalism. Phys. Rev. B 98, 155319 (2018).Article ADS Google Scholar Stano, P. et al. Review of performance metrics of spin qubits in gated semiconducting nanostructures. Nat. Rev. Phys. 4, 672–688 (2022).Article Google Scholar Michal, V. P. et al. Tunable hole spin-photon interaction based on g-matrix modulation. Phys. Rev. B 107, L041303 (2023).Article ADS Google Scholar Liles, S. D. et al. Electrical control of the g tensor of the first hole in a silicon MOS quantum dot. Phys. Rev. B 104, 235303 (2021).Article ADS Google Scholar Abadillo-Uriel, J. C. et al. Hole-spin driving by strain-induced spin-orbit interactions. Phys. Rev. Lett. 131, 097002 (2023).Article ADS Google Scholar Martinez, B. et al. Variability of electron and hole spin qubits due to interface roughness and charge traps. Phys. Rev. Appl. 17, 024022 (2022).Article ADS Google Scholar Ares, N. et al. Nature of tunable hole g factors in quantum dots. Phys. Rev. Lett. 110, 046602 (2013).Article ADS Google Scholar Voisin, B. et al. Electrical control of g-factor in a few-hole silicon nanowire MOSFET. Nano Lett. 16, 88–92 (2016).Article ADS Google Scholar Michal, V. P. et al. Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels. Phys. Rev. B 103, 045305 (2021).Article ADS Google Scholar Bosco, S. et al. Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots. Phys. Rev. Lett. 127, 190501 (2021).Article ADS Google Scholar Yoneda, J. et al. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%. Nat. Nanotechnol. 13, 102–106 (2018).Article ADS Google Scholar Takeda, K. et al. A fault-tolerant addressable spin qubit in a natural silicon quantum dot. Sci. Adv. 2, e1600694 (2016).Article ADS Google Scholar Ithier, G. et al. Decoherence in a superconducting quantum bit circuit. Phys. Rev. B 72, 134519 (2005).Article ADS Google Scholar Gustavsson, S. et al. Improving quantum gate fidelities by using a qubit to measure microwave pulse distortions. Phys. Rev. Lett. 110, 040502 (2013).Article ADS Google Scholar Fischer, J. et al. Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot. Phys. Rev. B 78, 155329 (2008).Article ADS Google Scholar Testelin, C. et al. Hole–spin dephasing time associated with hyperfine interaction in quantum dots. Phys. Rev. B 79, 195440 (2009).Article ADS Google Scholar Borsoi, F. et al. Shared control of a 16 semiconductor quantum dot crossbar array. Nat. Nanotechnol. 19, 21–27 (2024).Article ADS Google Scholar Muhonen, J. T. et al. Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking. J. Phys.: Condens. Matter 27, 154205 (2015).ADS Google Scholar Lawrie, W. I. L. et al. Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold. Nat. Commun. 14, 3617 (2023).Article ADS Google Scholar Schmitt, V. et al. Data for ‘Optimal operation of hole spin qubits’. Zenodo https://doi.org/10.5281/zenodo.17378720 (2025).Download referencesThis work is supported by the French National Research Agency under the programme France 2030 (PEPR PRESQUILE - ANR-22-PETQ-0002), by the European Union’s Horizon 2020 research innovation programme through projects QLSI1 and QLSI2 (Grant Agreement Nos. 951852 and 101135712, respectively) and the European Research Council project QuCube (Grant Agreement No. 810504). J.C.A.-U. is supported by Grant Nos. RYC2022-037527-I and PID2023-148257NA-I00 funded by MCIU/AEI/10.13039/501100011033 and by the ESF+. V.C. acknowledges support from the Program QuantForm-UGA ANR-21-CMAQ-0003 France 2030 and by the LabEx LANEF ANR-10-LABX-51-01.Université Grenoble Alpes, CEA, Grenoble INP, IRIG, Pheliqs, Grenoble, FranceM. Bassi, B. Brun, S. Zihlmann, T. Nguyen, V. Champain, R. Maurand, X. Jehl, S. De Franceschi & V. SchmittUniversity Grenoble Alpes, CEA, IRIG-MEM-L_Sim, Grenoble, FranceE. A. Rodríguez-Mena, J. C. Abadillo-Uriel & Y.-M. NiquetInstituto de Ciencia de Materiales de Madrid, CSIC, Madrid, SpainJ. C. Abadillo-UrielUniversité Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, FranceB. Bertrand & H. NiebojewskiSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarM.B., B. Brun, T.N., V.C. and V.S. performed the experiments with support from S.Z., R.M. and X.J. and advice from all co-authors. M.B, E.A.R.-M., J.C.A.-U., Y.-M.N. and V.S. performed the simulations and the data analysis. B. Bertrand and H.N. designed and supervised the fabrication of the device. M.B., E.A.R.-M., Y.-M.N., S.D.F. and V.S. co-wrote the paper with input from all co-authors. V.S. led the experiments. S.D.F. initiated the project.Correspondence to S. De Franceschi or V. Schmitt.The authors declare no competing interests.Nature Physics thanks Hendrik Bluhm and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.Blue (red) points are g-factors measured by EDSR of Q3 (Q4). Solid lines are the fitted g-factors using the g-matrix formalism presented in Methods and Supplementary Section 2. The g-factor configuration presented for the qubit Q3 correspond to the left panel of Fig. 2. The tilt of the principal axes of the lobes with respect to the device axes is most likely due to inhomogeneous strains14,24,25.a Ramsey coherence time (green points) plotted as a function of magnetic field angle θ in the sample plane. In red are depicted the absolute values of β∥(T3) and the corresponding fit presented in the main text. Dashed lines evidence the sweet-spot positions where the coherence time is expected to increase. b Inverse of Hahn-Echo coherence time plotted as a function of magnetic field direction in the sample plane (NP). The red solid line is the fit to ∣β∥(T3)∣ presented in the main text. c Rabi frequency variations according to magnetic field direction in the sample plane (NP). Red line and points (fit) represent ∣β∥(T3)∣. At the sweet-spot orientations two distinct cases are observed: one sweet spot with a fast electrical control (θ = − 20°) and the second one (θ = 35°) with a much slower Rabi frequency.Supplementary Sections I–V and Figs. 1–5.Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.Reprints and permissionsBassi, M., Rodríguez-Mena, E.A., Brun, B. et al. Optimal operation of hole spin qubits. Nat. Phys. (2025). https://doi.org/10.1038/s41567-025-03106-1Download citationReceived: 11 February 2025Accepted: 21 October 2025Published: 12 December 2025Version of record: 12 December 2025DOI: https://doi.org/10.1038/s41567-025-03106-1Anyone you share the following link with will be able to read this content:Sorry, a shareable link is not currently available for this article. Provided by the Springer Nature SharedIt content-sharing initiative
