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Samsung Announces Mass Production of HBM4 with 11.7Gbps Speed

Quantum Zeitgeist
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Samsung has begun mass-producing HBM4 memory, the first in the industry, achieving 11.7Gbps transfer speeds—46% faster than the 8Gbps standard—setting a new benchmark for AI and datacenter performance. The memory uses a 6th-gen 10nm-class DRAM process and 4nm logic die, enabling stable yields without redesigns, while delivering 3.3TB/s bandwidth per stack—2.7x higher than HBM3E. Capacities range from 24GB to 36GB via 12-layer stacking, with future 16-layer versions targeting 48GB, addressing escalating AI workload demands. Power efficiency improved by 40% through low-voltage TSV technology and optimized power distribution, reducing operational costs for high-performance computing. Samsung’s shift from incremental upgrades to ground-up redesign underscores its leadership in HBM innovation, prioritizing speed, bandwidth, and efficiency for next-gen AI infrastructure.
Samsung Announces Mass Production of HBM4 with 11.7Gbps Speed

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Samsung Electronics has begun mass production and shipment of its industry-first HBM4, dramatically boosting performance for demanding AI applications. Achieving a consistent transfer speed of 11.7 gigabits-per-second – exceeding the 8Gbps industry standard by roughly 46% – this new memory sets a benchmark for next-generation datacenters. The leading-edge DRAM utilizes a 4nm logic base die and delivers up to 3.3 terabytes-per-second of bandwidth per stack. “Instead of taking the conventional path of utilizing existing proven designs, Samsung took the leap and adopted the most advanced nodes like the 1c DRAM and 4nm logic process for HBM4,” said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics, highlighting the company’s commitment to innovation.

Samsung Begins Mass Production of Industry-First 11.7Gbps HBM4 A nearly 46% leap in data transfer speeds is now reality as Samsung Electronics commences mass production and shipment of its HBM4 dynamic random-access memory. This achievement establishes an industry first, positioning Samsung as a leader in the burgeoning high-bandwidth memory market critical for advanced artificial intelligence computing. The new DRAM utilizes a 6th-generation 10 nanometer (nm)-class DRAM process, achieving stable yields without requiring redesigns—a testament to Samsung’s manufacturing prowess. Samsung’s HBM4 consistently delivers 11.7 gigabits-per-second, significantly exceeding the 8Gbps industry standard and representing a 1.22x increase over the previous HBM3E generation. Beyond speed, Samsung has addressed the escalating demands of AI by increasing total memory bandwidth per stack 2.7x to 3.3 terabytes-per-second. Available in capacities from 24 to 36 gigabytes through 12-layer stacking, future iterations will expand to 48GB using 16-layer technology. Power efficiency has also been prioritized, with a 40% improvement achieved through low-voltage through silicon via (TSV) technology and power distribution network (PDN) optimization. 6th-Generation 10nm DRAM & 4nm Logic Optimize HBM4 Performance The current landscape of high-bandwidth memory (HBM) is defined by incremental improvements to existing architectures, primarily focused on stacking more layers of DRAM to increase capacity and bandwidth. However, Samsung Electronics is diverging from this trend with its newly mass-produced HBM4, a memory solution engineered from the ground up with advanced process technologies. This isn’t simply about adding more layers; it’s a fundamental shift in design philosophy, leveraging cutting-edge fabrication techniques to maximize performance and efficiency. A key element of this advancement is the adoption of Samsung’s 6th-generation 10 nanometer (nm)-class DRAM process, paired with a 4nm logic base die. Furthermore, total memory bandwidth per stack has seen a substantial 2.7x increase compared to HBM3E, reaching 3.3 terabytes-per-second. Samsung’s HBM4 delivers a consistent processing speed of 11.7 gigabits-per-second (Gbps), exceeding the industry standard of 8Gbps by approximately 46% and setting a new benchmark for HBM4 performance. Samsung Electronics HBM4 Delivers 2.7x Bandwidth & Enhanced Power Efficiency for AI Samsung is pushing the boundaries of AI-focused memory with its newly mass-produced HBM4, a development poised to significantly accelerate machine learning workloads. Beyond simply increasing speed, the company has focused on optimizing power consumption and thermal performance – critical considerations as AI models grow in complexity. This combination promises maximized GPU throughput and reduced total cost of ownership for data centers. Source: https://news.samsung.com/global/samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing Tags: Quantum News There is so much happening right now in the field of technology, whether AI or the march of robots. Adrian is an expert on how technology can be transformative, especially frontier technologies. But Quantum occupies a special space. Quite literally a special space. A Hilbert space infact, haha! Here I try to provide some of the news that is considered breaking news in the Quantum Computing and Quantum tech space. Latest Posts by Quantum News: New Optical Computing Prototype Could Dramatically Reduce AI Energy Use February 12, 2026 QuantaMap Breakthrough Published in ACS Nano Letters Accelerates Quantum Materials Research February 12, 2026 Protected: Quantum Innovation Summit 2026 to Focus on Quantum Readiness & Deployment February 12, 2026

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Source: Quantum Zeitgeist