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NEGF Modeling of Impact Ionization in Semiconductor Avalanche Photodiodes for Quantum Networking

arXiv Quantum Physics
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Researchers introduced a quantum transport simulation framework using Non-Equilibrium Green’s Function (NEGF) to model impact ionization in semiconductor avalanche photodiodes, addressing gaps in semiclassical methods for quantum networking devices. The study challenges traditional semiclassical models by capturing strongly non-equilibrium, energy-resolved scattering in nanoscale high-field junctions, where mean-field assumptions fail to describe carrier multiplication accurately. The team formulated impact ionization as a multi-particle self-energy within NEGF, enabling non-perturbative, atomic orbital-resolved analysis of carrier multiplication directly from the device’s spectral function. Simulations on a model semiconductor under high electric fields revealed energy-dependent transport and nonequilibrium charge distributions, offering microscopic insights into avalanche breakdown mechanisms. This framework establishes a baseline for predictive modeling of silicon single-photon detectors and avalanche photodiodes, critical for advancing quantum network receiver performance and reliability.
NEGF Modeling of Impact Ionization in Semiconductor Avalanche Photodiodes for Quantum Networking

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Quantum Physics arXiv:2605.01244 (quant-ph) [Submitted on 2 May 2026] Title:NEGF Modeling of Impact Ionization in Semiconductor Avalanche Photodiodes for Quantum Networking Authors:Colin Burdine, Nischal Binod Gautam, Enrique P. Blair View a PDF of the paper titled NEGF Modeling of Impact Ionization in Semiconductor Avalanche Photodiodes for Quantum Networking, by Colin Burdine and 2 other authors View PDF Abstract:We present an atomistic quantum transport simulation framework based on the Non-Equilibrium Green's Function (NEGF) formalism to model impact ionization in semiconductor avalanche devices, with direct relevance to near-term quantum networking applications. Conventional descriptions of avalanche breakdown rely predominantly on semiclassical simulation methods, such as local ionization coefficients, semiclassical carrier trajectories, or Monte Carlo sampling, all of which implicitly assume weak correlations and mean-field electronic interactions. These assumptions break down in nanoscale, high-field junctions where carrier multiplication emerges from strongly non-equilibrium, energy-resolved scattering processes. Our approach formulates impact ionization as a multi-particle self-energy within NEGF, enabling a non-perturbative, energy- and atomic orbital-resolved description of carrier multiplication directly from the device spectral function. This formulation captures strongly inelastic scattering processes beyond semiclassical approximations and is implemented in a matrix-based real-space representation suitable for nanoscale device modeling. Using a model semiconductor structure under high electric fields, we demonstrate the emergence of carrier multiplication and analyze its dependence on energy-resolved transport and nonequilibrium charge distributions. The framework provides insight into microscopic mechanisms governing avalanche processes and their impact on device performance. Our results establish a transport baseline for self-consistent calculations of the impact-ionization self-energy and carrier multiplication. By resolving the available and occupied states that underlie avalanche onset, this framework provides a route toward predictive modeling of silicon single-photon avalanche detectors and avalanche photodiodes used in quantum-network receivers. Comments: Subjects: Quantum Physics (quant-ph) Cite as: arXiv:2605.01244 [quant-ph] (or arXiv:2605.01244v1 [quant-ph] for this version) https://doi.org/10.48550/arXiv.2605.01244 Focus to learn more arXiv-issued DOI via DataCite (pending registration) Submission history From: Colin Burdine [view email] [v1] Sat, 2 May 2026 04:52:39 UTC (3,156 KB) Full-text links: Access Paper: View a PDF of the paper titled NEGF Modeling of Impact Ionization in Semiconductor Avalanche Photodiodes for Quantum Networking, by Colin Burdine and 2 other authorsView PDFTeX Source view license Current browse context: quant-ph new | recent | 2026-05 References & Citations INSPIRE HEP NASA ADSGoogle Scholar Semantic Scholar export BibTeX citation Loading... BibTeX formatted citation × loading... Data provided by: Bookmark Bibliographic Tools Bibliographic and Citation Tools Bibliographic Explorer Toggle Bibliographic Explorer (What is the Explorer?) Connected Papers Toggle Connected Papers (What is Connected Papers?) Litmaps Toggle Litmaps (What is Litmaps?) scite.ai Toggle scite Smart Citations (What are Smart Citations?) Code, Data, Media Code, Data and Media Associated with this Article alphaXiv Toggle alphaXiv (What is alphaXiv?) Links to Code Toggle CatalyzeX Code Finder for Papers (What is CatalyzeX?) DagsHub Toggle DagsHub (What is DagsHub?) GotitPub Toggle Gotit.pub (What is GotitPub?) Huggingface Toggle Hugging Face (What is Huggingface?) ScienceCast Toggle ScienceCast (What is ScienceCast?) Demos Demos Replicate Toggle Replicate (What is Replicate?) Spaces Toggle Hugging Face Spaces (What is Spaces?) Spaces Toggle TXYZ.AI (What is TXYZ.AI?) Related Papers Recommenders and Search Tools Link to Influence Flower Influence Flower (What are Influence Flowers?) Core recommender toggle CORE Recommender (What is CORE?) Author Venue Institution Topic About arXivLabs arXivLabs: experimental projects with community collaborators arXivLabs is a framework that allows collaborators to develop and share new arXiv features directly on our website. Both individuals and organizations that work with arXivLabs have embraced and accepted our values of openness, community, excellence, and user data privacy. arXiv is committed to these values and only works with partners that adhere to them. Have an idea for a project that will add value for arXiv's community? Learn more about arXivLabs. Which authors of this paper are endorsers? | Disable MathJax (What is MathJax?)

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Source: arXiv Quantum Physics