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Atomically precise synthesis and simultaneous heterostructure integration of 2D transition metal dichalcogenides through nano-confinement

Nature Quantum Materials
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Chinese researchers developed a nano-confinement technique using graphene or hexagonal boron nitride as capping layers to achieve atomically precise synthesis of 2D transition metal dichalcogenides (TMDs) like NbSe₂ and MoS₂. The method enables controlled growth of TMD monolayers with customizable morphologies—from isolated domains to continuous films and patterned rings—while maintaining ultraclean van der Waals interfaces critical for quantum applications. Janus monolayers (e.g., S–Mo–Se) were synthesized with atomic precision via chalcogen substitution under van der Waals protection, expanding material design possibilities for electronics and optoelectronics. In situ encapsulation preserved air-sensitive materials, demonstrated by enhanced superconductivity in NbSe₂ monolayers, addressing a longstanding challenge in 2D material stability and performance. This breakthrough offers a scalable platform for integrating 2D heterostructures, advancing quantum devices, superconductors, and next-generation semiconductors with tailored atomic-scale properties.
Atomically precise synthesis and simultaneous heterostructure integration of 2D transition metal dichalcogenides through nano-confinement

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Nature Materials (2026)Cite this article Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs) and hexagonal boron nitride, exhibit intriguing properties that are sensitive to their atomic-scale structures and can be further enriched through van der Waals (vdW) integration. However, the precise synthesis and clean integration of 2D materials remain challenging. Here, using graphene or hexagonal boron nitride as a vdW capping layer, we create a nano-confined environment that directs the growth kinetics of 2D TMDs (such as NbSe2 and MoS2), enabling precise formation of TMD monolayers with tailored morphologies, from isolated monolayer domains to large-scale continuous films and intrinsically patterned rings. Moreover, Janus S–Mo–Se monolayers are synthesized with atomic precision via vdW-protected bottom-plane chalcogen substitution. Importantly, our approach simultaneously produces ultraclean vdW interfaces. 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This work was supported by the National Key R&D Program of China (2022YFA1204100), the National Natural Science Foundation of China (62488201) and the Chinese Academy of Sciences (XDB33030100 and XDB30010000). Y.Z. and F.D. acknowledge the startup grant and the High-Talent Grant (SIAT-SE3G0991010, 2023) from the Shenzhen Institute of Advanced Technology. R.G. and W.Z. acknowledge support from the National Natural Science Foundation of China (52373231) and the Beijing Outstanding Young Scientist Program (BJJWZYJH01201914430039). H.H. acknowledges support from the Chinese Academy of Sciences (XDB30000000). W.H. and Z.X. acknowledge support from the National Natural Science Foundation of China (52090032). This work benefited from support and resources from the Electron Microscopy Center at the University of Chinese Academy of Sciences.These authors contributed equally: Ce Bian, Yifan Zhao, Roger Guzman, Hongtao Liu.Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaCe Bian, Hongtao Liu, Qi Qi, Ke Zhu, Hao Wang, Kang Wu, Hui Guo, Haitao Yang & Hong-Jun GaoSchool of Physical Sciences, University of Chinese Academy of Sciences, Beijing, ChinaCe Bian, Roger Guzman, Qi Qi, Ke Zhu, Hao Wang, Kang Wu, Zhaoqing Wang, Wu Zhou, Haitao Yang & Hong-Jun GaoSuzhou Laboratory, Suzhou, ChinaYifan Zhao, Peng Peng & Feng DingInstitute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, ChinaYifan Zhao & Feng DingFrontier Institute of Science and Technology, Xi’an Jiaotong University, Xi’an, ChinaHao HuDepartment of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing, ChinaWanzhen He & Zhiping XuFaculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, ChinaPeng Peng & Feng DingSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarSearch author on:PubMed Google ScholarH.-J.G. conceived the idea and designed the project. C.B., Q.Q., K.Z., H.W., K.W. and P.P. synthesized the samples. C.B. performed the Raman, PL and SHG characterizations and conducted the crystal thickness and DGA analyses. R.G., Z.W. and W.Z. performed the STEM/EELS characterizations. Y.Z., H.H. and F.D. performed the DFT calculations. W.H. and Z.X. performed the phase-field simulations. C.B. and H.L. fabricated and measured the devices. C.B., H.L., H.G., F.D. and H.Y. analysed the growth mechanisms. C.B., H.L., W.Z., H.Y. and H.-J.G. wrote the paper with input from all authors.Correspondence to Wu Zhou, Feng Ding, Haitao Yang or Hong-Jun Gao.The Institute of Physics, Chinese Academy of Sciences filed a Chinese patent application (202111202207.3), which lists C.B., H.Y. and H.-J.G. as the inventors. Other than that, the authors declare no competing interests.Nature Materials thanks Vincent Tung and the other, anonymous reviewer(s) for their contribution to the peer review of this work.Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.Supplementary Figs. 1–23, Tables 1–9 and Notes 1–3.Source Data for Fig. 1f.Source Data for Fig. 2a,b.Source Data for Fig. 3b−f.Source Data for Fig. 4g,h.Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.Reprints and permissionsBian, C., Zhao, Y., Guzman, R. et al. Atomically precise synthesis and simultaneous heterostructure integration of 2D transition metal dichalcogenides through nano-confinement. Nat. Mater. (2026). https://doi.org/10.1038/s41563-026-02495-9Download citationReceived: 23 July 2024Accepted: 14 January 2026Published: 09 February 2026Version of record: 09 February 2026DOI: https://doi.org/10.1038/s41563-026-02495-9Anyone you share the following link with will be able to read this content:Sorry, a shareable link is not currently available for this article. Provided by the Springer Nature SharedIt content-sharing initiative

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